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| PD - 9.1320B IRLI3803 HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 30V RDS(on) = 0.006 G ID = 76A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 76 54 470 63 0.42 16 610 71 6.3 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Min. ---- ---- Typ. ---- ---- Max. 2.4 65 Units C/W 8/25/97 IRLI3803 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Min. 30 --- --- --- 1.0 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- --- 14 230 29 35 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.006 VGS = 10V, ID = 40A 0.009 VGS = 4.5V, ID = 34A --- V VDS = VGS, ID = 250A --- S VDS = 25V, I D = 71A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, T J = 150C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- ID = 71A ns --- RG = 1.3, VGS = 4.5V --- RD = 0.20, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact 5000 --- VGS = 0V 1800 --- pF VDS = 25V 880 --- = 1.0MHz, See Fig. 5 12 --- = 1.0MHz D G S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 120 450 76 A 470 1.3 180 680 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 40A, VGS = 0V TJ = 25C, IF = 71A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by I SD 71A, di/dt 130A/s, VDD V(BR)DSS , t=60s, =60Hz max. junction temperature. ( See fig. 11 ) TJ 175C VDD = 15V, starting TJ = 25C, L = 180H Pulse width 300s; duty cycle 2%. Uses IRL3803 data and test conditions RG = 25, IAS = 71A. (See Figure 12) IRLI3803 10000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTT OM 2.0V TOP 10000 ID , D ra in -to -S o u rce C u rre n t (A ) 1000 ID , D ra in -to -S o u rce C u rre n t (A ) 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP 100 100 10 10 1 1 2.0V 0.1 0.1 2.0 V 0.01 0.1 1 20 s PU LSE W ID TH T J = 2 5C 10 A 0.01 0.1 1 2 0 s PU L SE W ID TH T J = 1 75 C 10 A 100 100 V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-S ource Voltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 I D , D r ain- to-S ourc e C urre nt (A ) T J = 2 5 C 100 TJ = 1 7 5 C R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 12 0A 1.5 10 1.0 1 0.5 0.1 0.01 2.0 3.0 4.0 5.0 V DS = 2 5 V 2 0 s PU L SE W ID TH 6.0 7.0 8.0 9.0 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -S ource V olta ge (V ) T J , Junction T emperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRLI3803 10000 V G S , G a te -to -S o u rce V o lta g e (V ) 8000 V GS C iss C rs s C is s C os s = = = = 0V , f = 1 MH z C gs + C gd , C ds SH O R TED C gd C ds + C gd 15 I D = 71A V DS = 24 V V DS = 15 V 12 C , C a p a c ita n c e (p F ) 6000 C os s 9 4000 6 C rs s 2000 3 0 1 10 100 A 0 0 40 80 FO R TEST CIR CU IT SEE FIG UR E 13 120 160 A 200 V D S , D rain-to-S ource Voltage (V ) Q G , T otal Gate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 IS D , R e ve rs e D ra in C u rre n t (A ) OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) 1 0s TJ = 17 5C 100 I D , D ra in C u rre n t (A ) 100 1 00s TJ = 2 5C 1 ms 10 0.4 0.8 1.2 1.6 2.0 2.4 VG S = 0 V 2.8 A 10 1 T C = 25 C T J = 17 5C S ing le Pulse 10 10 ms 100 A 3.2 V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLI3803 80 VDS VGS RD D.U.T. + ID , Drain Current (A) 60 RG - VDD 4.5V 40 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 PDM t1 t2 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLI3803 L VDS D.U.T. RG + 4.5 V 1500 E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) TO P 1200 BO TTOM ID 2 9A 50A 71 A VDD IAS tp 0.01 900 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 600 300 0 V D D = 1 5V 25 50 75 100 125 150 A 175 Starting TJ , Junction T emperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 4.5 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLI3803 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLI3803 Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) o 3.40 (.133 ) 3.10 (.123 ) -A 3.70 (.145) 3.20 (.126) 4.8 0 (.189) 4.6 0 (.181) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 1.40 (.05 5) 3X 1.05 (.04 2) 2 .54 (.100) 2X 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112 ) 2.65 (.104 ) M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 FullPak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER LOGO PA RT NU MBE R IRF I840G E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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